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Spacer Engineered FinFET Architectures High-Performance Digital Circuit Applications

Spacer Engineered FinFET Architectures High-Performance Digital Circuit Applications

This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node its process complexity variability and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations. | Spacer Engineered FinFET Architectures High-Performance Digital Circuit Applications

GBP 44.99
1

Essential Principles of Image Sensors

Essential Principles of Image Sensors

Providing a succinct introduction to the systemization noise sources and signal processes of image sensor technology Essential Principles of Image Sensors discusses image information and its four factors: space light intensity wavelength and time. Featuring clarifying and insightful illustrations this must-have text: Explains how image sensors convert optical image information into image signals Treats space wavelength and time as digitized built-in coordinate points in image sensors and systems Details the operational principles pixel technology and evolution of CCD MOS and CMOS sensors with updated technology Describes sampling theory presenting unique figures demonstrating the importance of phase Explores causes for the decline of image information quality In a straightforward manner suitable for beginners and experts alike Essential Principles of Image Sensors covers key topics related to digital imaging including semiconductor physics component elements necessary for image sensors silicon as a sensitive material noises in sensors and more.

GBP 74.99
1

Handbook for III-V High Electron Mobility Transistor Technologies

Handbook for III-V High Electron Mobility Transistor Technologies

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics material used fabrications details modeling simulation and other important aspects. It initiates by describing principle of operation material systems and material technologies followed by description of the structure I-V characteristics modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key FeaturesCombines III-As/P/N HEMTs with reliability and current status in single volumeIncludes AC/DC modelling and (sub)millimeter wave devices with reliability analysisCovers all theoretical and experimental aspects of HEMTsDiscusses AlGaN/GaN transistorsPresents DC RF and breakdown characteristics of HEMTs on various material systems using graphs and plots | Handbook for III-V High Electron Mobility Transistor Technologies

GBP 48.99
1

Amplifiers Comparators Multipliers Filters and Oscillators

Amplifiers Comparators Multipliers Filters and Oscillators

The book presents design methods for analog integrated circuits with improved electrical performance. It describes different equivalent transistor models design methods and fabrication considerations for high-density integrated circuits in nanometer CMOS processes and it analyzes circuit architectures that are suitable for analog building blocks. Highlighting various design challenges the text offers a complete understanding of architectural- and transistor-level design issues of analog integrated circuits. It examines important trends in the design of high-speed and power-efficient front-end analog circuits that can be used for signal conditioning filtering and detection applications. Offers a comprehensive resource for mastering the analysis of analog integrated circuits. Describes circuit-level details of high-speed and power-efficient analog building blocks. Explores design methods based on various MOS transistor models (MOSFET FinFET). Provides mathematical derivations of all equations and formulas. Emphasizes practical aspects relevant to integrated circuit implementation. Includes open-ended circuit design case studies. | Amplifiers Comparators Multipliers Filters and Oscillators

GBP 44.99
1

High-k Gate Dielectric Materials Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

High-k Gate Dielectric Materials Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

This volume explores and addresses the challenges of high-k gate dielectric materials one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials including a brief historical note of Moore’s law followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures like tunneling FET are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology. | High-k Gate Dielectric Materials Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

GBP 82.99
1

Influence of Temperature on Microelectronics and System Reliability A Physics of Failure Approach

Influence of Temperature on Microelectronics and System Reliability A Physics of Failure Approach

This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds flip-chip or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature temperature cycle temperature gradient and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens including burn-in for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The | Influence of Temperature on Microelectronics and System Reliability A Physics of Failure Approach

GBP 59.99
1

Introduction to Image Acquisition and Display Technologies Photon manipulation in image sensors and displays

Introduction to Image Acquisition and Display Technologies Photon manipulation in image sensors and displays

In this valuable reference work Ichiro Fujieda focuses on the component technologies device configurations and operation principles of image acquisition and display technologies and provides detailed use cases to give practical guidance on the various current and potential future applications of these technologies. The technology and the physics behind these devices can be grouped into three categories: optical technology material science and semiconductor device technology. This book enables readers to gain an understanding of these three areas in relation to the flow of image information and several example applications of the technology. Fujieda first describes the building blocks of image sensors and displays (detectors light sources transistors and wavefront control devices) and their configurations operation principles and characteristics. He then describes in more detail image sensor technology (including MOS image sensors CCD technologies and X-ray and infrared imagers) and displays (including thin-film transistor arrays LCDs OLEDs MEMS devices and more). Finally he provides real-world examples of how these technologies are used together to give the reader an understanding of their practical applications and their potential use in future devices. Some important laws in optics and definitions in color science are included for easy reference. Through this approach the reader will gain a detailed understanding of each of the component parts of existing imaging devices and will be able to apply this to future developments within the field. This book will benefit any advanced undergraduate and graduate student and industry professional who wishes to expand his or her understanding of the hardware handling digital images. Some basic knowledge is required on semiconductor device physics and the interaction of radiation with matter though these are described in the appropriate sections. | Introduction to Image Acquisition and Display Technologies Photon manipulation in image sensors and displays

GBP 82.99
1

Financial Crimes A Threat to Global Security

Financial Crimes A Threat to Global Security

Financial market reform has focused chiefly on the threats to stability arising from the risky uncontrolled activity of the leaders of financial institutions. Nevertheless organized crime white-collar crime and corruption have a huge impact on financial systems worldwide and must also be confronted if true reform is to be achieved. A collection of articles written by experts in their fields of study Financial Crimes: A Threat to Global Security spotlights the importance of addressing the problem of illegal financial activity as part of a greater comprehensive plan for reforming the financial sector. Drawn from the 23rd Annual Meeting of the Academic Council on the United Nations System (ACUNS) held in Vienna the book explores the major themes discussed at this elite symposium. In the first section the contributors examine changing concepts in security over the course of history and across nations. They discuss how an event in Austria led to the implementation of a new security philosophy that is now followed by the majority of the European Union. The book examines the diverse models of preventing security threats that have grown from that idea as well as the gradual expansion of the role of the security council of the United Nations. The next section analyzes the present state of security worldwide and examines the wide array of criminal activity that plagues the financial sector. Expert contributors reveal methods to identify certain types of behavior and criminals as well as efforts to combat illegal activity—including the role of the media. The final section investigates alternative approaches to preventing another worldwide financial disaster through investigative reporting human factors analysis legislative initiatives and other methods. Filled with insight from international experts the book highlights both the warning signs to illegal activity as well as the mos | Financial Crimes A Threat to Global Security

GBP 44.99
1