Infineon N-Channel MOSFET, 100 A, 211 A, 40 V, 3-Pin IPAK AUIRFU8405
Infineon N-Channel MOSFET, 100 A, 211 A, 40 V, 3-Pin IPAK AUIRFU8405, Package Type: IPAK (TO-251), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.98 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 163 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm