Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40
Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 (Channel 1) W, 48 (Channel 2) W, 60 (Channel 3) W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3