Fremgang.nu | Google Ads-bureau

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d, MPN: TLHR4401

GBP 0.10

1

Vishay LED, High Efficiency; Green; 4 mcd (Min.); 3.2 + 0.15 mm; T-1; 30 mA; 100 mW

Vishay LED, High Efficiency; Green; 4 mcd (Min.); 3.2 + 0.15 mm; T-1; 30 mA; 100 mW, MPN: TLHG4605

GBP 0.19

1

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP, MPN: TLUV5300

GBP 0.28

1

Vishay LED; Yellow; 10 mcd (Typ.); 5.8 mm; T-1 3/4; 30 mA; 2.4 V (Typ.); 6 V (Typ.)

Vishay LED; Yellow; 10 mcd (Typ.); 5.8 mm; T-1 3/4; 30 mA; 2.4 V (Typ.); 6 V (Typ.), MPN: TLHY5405

GBP 0.12

1

Vishay LED; Yellow; 5 mcd (Typ.); 3.2 mm; T-1; 30 mA; 2.4 V (Typ.); 6 V (Typ.); 585 nm

Vishay LED; Yellow; 5 mcd (Typ.); 3.2 mm; T-1; 30 mA; 2.4 V (Typ.); 6 V (Typ.); 585 nm, MPN: TLHY4605

GBP 0.10

1

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/, MPN: CW02B30R00JE12

GBP 0.54

1

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/, MPN: CW00530R00JE12

GBP 0.60

1

Vishay LED; Yellow; 2 mcd (Typ.); 3.2 mm + 0.15 mm; 3 mm Low Current Tinted Diffused

Vishay LED; Yellow; 2 mcd (Typ.); 3.2 mm + 0.15 mm; 3 mm Low Current Tinted Diffused, MPN: TLLY4401

GBP 0.10

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.40

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.92

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.39

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.78

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.38

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 3.4mm

GBP 0.59

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.21

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.68

1

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.22

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.99

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.49

1

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET, MPN: SI4948BEY-T1-E3

GBP 0.94

1

Vishay Steel 1 Piece Trimmer Tool, 127 mm

Vishay Steel 1 Piece Trimmer Tool, 127 mm, Blade Length: 1.27 mm, MPN: ACCTRITOB308

GBP 1.63

1

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 3.93

1

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 4.62

1

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 4.20

1

Vishay CAPACITOR, ALUM. ELECTROLYTIC, AXIAL, MINIATURE,10UF, 50V,1-10%, +30%,

Vishay CAPACITOR, ALUM. ELECTROLYTIC, AXIAL, MINIATURE,10UF, 50V,1-10%, +30%,, MPN: 516D106M050JL6AE3

GBP 0.31

1

Digital synlighed. Målbart afkast.

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?

Brand

Colour

Gender

Merchant

Price (EUR)

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d

Vishay LED, High Efficiency; Green; 4 mcd (Min.); 3.2 + 0.15 mm; T-1; 30 mA; 100 mW

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay LED; Yellow; 10 mcd (Typ.); 5.8 mm; T-1 3/4; 30 mA; 2.4 V (Typ.); 6 V (Typ.)

Vishay LED; Yellow; 5 mcd (Typ.); 3.2 mm; T-1; 30 mA; 2.4 V (Typ.); 6 V (Typ.); 585 nm

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay LED; Yellow; 2 mcd (Typ.); 3.2 mm + 0.15 mm; 3 mm Low Current Tinted Diffused

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Steel 1 Piece Trimmer Tool, 127 mm

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay CAPACITOR, ALUM. ELECTROLYTIC, AXIAL, MINIATURE,10UF, 50V,1-10%, +30%,

Powered by Cobiro

Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

Colour

Gender

Merchant

Price (EUR)

Vishay LED; Red; 5 mcd (Typ.); 3 mm; T-1; 30 mA; 2 V (Typ.); 15 V (Typ.); 100 mW; 30 d

Vishay LED, High Efficiency; Green; 4 mcd (Min.); 3.2 + 0.15 mm; T-1; 30 mA; 100 mW

Vishay LED; Green/Red; 1 mcd (Min.); 5 mm; 30 mA per Diode; 15 V (Typ.); GaAsP on GaP

Vishay LED; Yellow; 10 mcd (Typ.); 5.8 mm; T-1 3/4; 30 mA; 2.4 V (Typ.); 6 V (Typ.)

Vishay LED; Yellow; 5 mcd (Typ.); 3.2 mm; T-1; 30 mA; 2.4 V (Typ.); 6 V (Typ.); 585 nm

Vishay Resistor, Wirewound;30 Ohms;3 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay Resistor; Wirewound;30 Ohms;5 W;+/-5%;Axial;Silicone;1.5 In.;1000 VAC;+/-30 ppm/

Vishay LED; Yellow; 2 mcd (Typ.); 3.2 mm + 0.15 mm; 3 mm Low Current Tinted Diffused

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin SOIC SI4164DY-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH SISHA10DN-T1-GE3

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Dual N-Channel 30-V (D-S) MOSFET

Vishay Steel 1 Piece Trimmer Tool, 127 mm

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SIHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC SiHG32N50D-GE3

Vishay CAPACITOR, ALUM. ELECTROLYTIC, AXIAL, MINIATURE,10UF, 50V,1-10%, +30%,

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?