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Toshiba Photocoupler IC output High speed 10Mbit

Toshiba Photocoupler IC output High speed 10Mbit, MPN: TLP115A

GBP 2.05

1

Toshiba, TLP2962F(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba Photo IC Output Optocoupler, Through Hole, 8-Pin DIP, Maximum Forward Voltage: 1.7V, Typical Rise Time: 12ns, Maximum Input Current: 4 mA, Isolation Voltage: 5000 Vrms, Logic Output: Yes, Typical Fall Time: 3ns, Series: TLP 2962, Special Features: High-Output Gaalas Light-Emitting Diode Coupled with Integrated High Gain, High-Speed Digital Interfacing, High-Speed Photo Detector, Ideal for Factory Automation, Measurement Instrumentation, MPN: TLP2962F(F)

GBP 0.59

1

Toshiba, TLP2962(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba Photo IC Output Optocoupler, Through Hole, 8-Pin DIP, Maximum Forward Voltage: 1.7V, Typical Rise Time: 12ns, Maximum Input Current: 4 mA, Isolation Voltage: 5000 Vrms, Logic Output: Yes, Typical Fall Time: 3ns, Series: TLP 2962, Special Features: High-Output Gaalas Light-Emitting Diode Coupled with Integrated High Gain, High-Speed Digital Interfacing, High-Speed Photo Detector, Ideal for Factory Automation, Measurement Instrumentation, MPN: TLP2962(F)

GBP 0.59

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.83

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.56

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 1.68

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 4.10

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.93

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.47

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.22

1

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 375 W, Switching Speed: 0.55µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Gate Capacitance: 4500pF, Maximum Operating Temperature: 175 °C

GBP 3.13

1

Toshiba, TLP2409(F) Photo IC Output Optocoupler, Surface Mount, 8-Pin SOIC

Toshiba Photo IC Output Optocoupler, Surface Mount, 8-Pin SOIC, Maximum Forward Voltage: 1.8V, Maximum Input Current: 15 mA, Isolation Voltage: 3750 Vrms, Series: TLP 2409, Special Features: High Output Power Gaalas Light-Emitting Diode Coupled with High-Speed Photodiode-Transistor Chip, MPN: TLP2409(F)

GBP 1.30

1

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 0.4µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Gate Capacitance: 1500pF, Maximum Operating Temperature: +175 °C

GBP 2.80

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.40

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 4.8mm, Height: 20mm, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.43

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.04

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.60

1

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 0.4µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Energy Rating: 0.29mJ, Gate Capacitance: 1500pF, Maximum Operating Temperature: 175 °C

GBP 3.40

1

Toshiba, TLP2355(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

Toshiba Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC, Maximum Forward Voltage: 1.7V, Typical Rise Time: 75ns, Maximum Input Current: 20 mA, Isolation Voltage: 3.75 kVrms, Logic Output: Yes, Series: TLP 2355, Special Features: High-Speed Digital Interfacing for Instrumentation and Control Devices, MPN: TLP2355(E(T

GBP 0.52

1

Toshiba, TLP152(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SO6

Toshiba Photo IC Output Optocoupler, Surface Mount, 5-Pin SO6, Maximum Forward Voltage: 1.8V, Typical Rise Time: 18ns, Maximum Input Current: 3 mA, Isolation Voltage: 3750 Vrms, Logic Output: Yes, Typical Fall Time: 22ns, Series: TLP 152, Special Features: High-Speed Photo Detector IC Chip, MPN: TLP152(E(T

GBP 0.75

1

Toshiba, TLP2361(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

Toshiba Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC, Maximum Forward Voltage: 1.65V, Typical Rise Time: 3ns, Maximum Input Current: 1 mA, Isolation Voltage: 3.75 kVrms, Logic Output: Yes, Series: TLP 2361, Special Features: High-Output Gaalas Light-Emitting Diode Coupled with High-Speed Photodetectors, MPN: TLP2361(E(T

GBP 0.54

1

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Price (EUR)

Toshiba Photocoupler IC output High speed 10Mbit

Toshiba, TLP2962F(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba, TLP2962(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

Toshiba, TLP2409(F) Photo IC Output Optocoupler, Surface Mount, 8-Pin SOIC

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Toshiba, TLP2355(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

Toshiba, TLP152(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SO6

Toshiba, TLP2361(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

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Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

Toshiba Photocoupler IC output High speed 10Mbit

Toshiba, TLP2962F(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba, TLP2962(F) Photo IC Output Optocoupler, Through Hole, 8-Pin DIP

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

Toshiba, TLP2409(F) Photo IC Output Optocoupler, Surface Mount, 8-Pin SOIC

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Toshiba, TLP2355(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

Toshiba, TLP152(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SO6

Toshiba, TLP2361(E(T Photo IC Output Optocoupler, Surface Mount, 5-Pin SOIC

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