Fremgang.nu | Google Ads-bureau

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.25

1

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.30

1

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.71

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.27

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.10

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.32

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 7.17

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.22

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.84

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.51

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.70

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.05

1

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 1.59

1

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 0.89

1

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 1.89

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.33

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.40

1

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC, Logic Type: CMOS, TTL, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Dimensions: 10 x 6.2 x 1.5mm

GBP 1.54

1

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC, Logic Type: CMOS, TTL, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Dimensions: 10 x 6.2 x 1.5mm

GBP 1.81

1

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, Number of PWM Units: 1 x 16 bit, Typical Operating Supply Voltage: 3.6 V, ADCs: 28 x 12 bit, Dimensions: 16.2 x 16.2 x 1.45mm

GBP 3.06

1

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, Number of PWM Units: 1 x 16 bit, Typical Operating Supply Voltage: 3.6 V, ADCs: 28 x 12 bit, Dimensions: 16.2 x 16.2 x 1.45mm

GBP 2.61

1

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.78

1

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.89

1

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, RAM Size: 6 kB, Number of PWM Units: 1 x 16 bit, Typical Operating Supply Voltage: 5.5 V, ADCs: 16 x 10 bit, Dimensions: 10.2 x 10.2 x 1.45mm

GBP 4.03

1

Digital synlighed. Målbart afkast.

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP

Powered by Cobiro

Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?