Fremgang.nu | Google Ads-bureau

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN, Modulation Technique: AM, Dimensions: 5 x 5 x 0.95mm, Mounting Type: Surface Mount, Maximum Operating Band 1 Frequency: 13.56 MHz, 27.12MHz, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +125 °C, Minimum Operating Supply Voltage: 2.4 V, Minimum Operating Temperature: -40 °C

GBP 4.88

1

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN, Maximum Operating Band 1 Frequency: 13.56 MHz, 27.12 MHz, Data Rate: 424kbit/s, Height: 0.95mm, Modulation Technique: AM, Maximum Operating Supply Voltage: 5.5 V, Minimum Operating Supply Voltage: 2.4 V, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Mounting Type: Surface Mount, Dimensions: 5 x 5 x 0.95mm

GBP 4.59

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 5-Pin HV STL19N60M6

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 5-Pin HV STL19N60M6, Maximum Drain Source Resistance: 0.308 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 4.61

1

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.7 O, Maximum Gate Threshold Voltage: 4.9V

GBP 8.77

1

STMicroelectronics N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170

STMicroelectronics N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170, Maximum Drain Source Resistance: 1.66 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.9V

GBP 8.59

1

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120, Maximum Drain Source Resistance: 0.189 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 8.29

1

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247™ SCT10N120, Maximum Drain Source Resistance: 0.58 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 8.35

1

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6, Maximum Drain Source Resistance: 0.091 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V

GBP 5.78

1

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6, Maximum Drain Source Resistance: 0.091 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V

GBP 6.69

1

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247™ SCT10N120, Maximum Drain Source Resistance: 0.58 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 7.18

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 4.68

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 8.21

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 6.85

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H, Maximum Drain Source Resistance: 0.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 4.60

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120, Maximum Drain Source Resistance: 0.55 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 6.04

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H, Maximum Drain Source Resistance: 0.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 7.44

1

STMicroelectronics SiC N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP STF16N90K5

STMicroelectronics SiC N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP STF16N90K5, Maximum Drain Source Resistance: 0.33 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: SiC MOSFET

GBP 5.01

1

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H, Maximum Drain Source Resistance: 0.203 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 239V, Series: SiC MOSFET

GBP 8.36

1

STMicroelectronics N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220FP STL47N60M6

STMicroelectronics N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220FP STL47N60M6, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: Mdmesh M6 series

GBP 6.10

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STWA68N65DM6AG

STMicroelectronics Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STWA68N65DM6AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.039 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V

GBP 5.59

1

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 8.36

1

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 7.74

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.83

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.64

1

Digital synlighed. Målbart afkast.

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 5-Pin HV STL19N60M6

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

STMicroelectronics N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP STF16N90K5

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220FP STL47N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STWA68N65DM6AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

Powered by Cobiro

Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics ST25R3911B-AQFT RF Transceiver, 32-Pin QFN

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 5-Pin HV STL19N60M6

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

STMicroelectronics N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP STF16N90K5

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220FP STL47N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STWA68N65DM6AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?