STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V
STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V, Maximum Drain Source Resistance: 0.045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1