ROHM N-Channel MOSFET, 24 A, 600 V, 2 + Tab-Pin D2PAK R6024ENJTL
ROHM N-Channel MOSFET, 24 A, 600 V, 2 + Tab-Pin D2PAK R6024ENJTL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 245 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V