ROHM N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK RJ1L12BGNTLL
ROHM N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK RJ1L12BGNTLL, Package Type: TO-263AB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V