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Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 Ω, 7.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm

GBP 0.23
1

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 Ω, 7.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm

GBP 0.23
1

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115

Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 Ω, 7.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm

GBP 0.07
1

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.13
1

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.28
1

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.17
1

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 Ω, 4.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 990 mW, Maximum Gate Source Voltage: -8 V, +8 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.13
1

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 Ω, 4.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 990 mW, Maximum Gate Source Voltage: -8 V, +8 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.06
1

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 Ω, 4.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 990 mW, Maximum Gate Source Voltage: -8 V, +8 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.11
1