Fremgang.nu | Google Ads-bureau

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

GBP 2.92

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

GBP 3.36

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 3.66

1

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 3.19

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 2.31

1

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 2.01

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.57

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.57

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.56

1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 105 W

GBP 1.45

1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 105 W

GBP 1.63

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

GBP 0.61

1

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

GBP 1.52

1

Infineon N-Channel MOSFET, 23 A, 30 V DPAK IRLR2703TRPBF

GBP 0.63

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.90

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.87

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.90

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 4.62

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 4.62

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 5.44

1

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

GBP 2.67

1

Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

GBP 3.36

1

Infineon N-Channel MOSFET, 14 A, 30 V SO-8 IRF7458TRPBF

GBP 1.08

1

Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1

GBP 0.43

1

Infineon 1EDS5663HXUMA1, 8 A, 4V 16-Pin, PG-DSO-16-30

GBP 1.93

1

Digital synlighed. Målbart afkast.

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 23 A, 30 V DPAK IRLR2703TRPBF

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 14 A, 30 V SO-8 IRF7458TRPBF

Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1

Infineon 1EDS5663HXUMA1, 8 A, 4V 16-Pin, PG-DSO-16-30

Powered by Cobiro

Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

Gender

Merchant

Price (EUR)

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 23 A, 30 V DPAK IRLR2703TRPBF

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 14 A, 30 V SO-8 IRF7458TRPBF

Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1

Infineon 1EDS5663HXUMA1, 8 A, 4V 16-Pin, PG-DSO-16-30

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?