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Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC, Topology: High and Low Side, High and Low Sides Dependency: Independent, Bridge Type: Half Bridge, Polarity: Inverting, Mounting Type: Surface Mount, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 16.66 x 16.66 x 4.57 (with PIN)mm

GBP 8.32

1

Infineon IR2233JPBF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPBF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC, Topology: High and Low Side, High and Low Sides Dependency: Independent, Bridge Type: Half Bridge, Polarity: Inverting, Mounting Type: Surface Mount, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 16.66 x 16.66 x 4.57 (with PIN)mm

GBP 7.17

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Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC, Minimum Operating Supply Voltage: 10 V, Maximum Operating Supply Voltage: 20 V, Topology: High and Low Side, Mounting Type: Surface Mount, Peak Output Current: 500mA, Polarity: Inverting, Bridge Type: Half Bridge, Input Logic Compatibility: CMOS, LSTTL, High and Low Sides Dependency: Independent, Dimensions: 16.66 x 16.66 x 4.57 (with PIN)mm

GBP 7.16

1

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 W

GBP 7.05

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Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 W

GBP 6.08

1

Infineon IKQ40N120CH3XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ40N120CH3XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 500 W, Switching Speed: 60kHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm

GBP 6.44

1

Infineon IKQ40N120CT2XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ40N120CT2XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 500 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm

GBP 7.38

1

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 300 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 2.4mm

GBP 4.92

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Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm

GBP 6.00

1

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm

GBP 5.11

1

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Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPBF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKQ40N120CH3XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ40N120CT2XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

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Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

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Price (EUR)

Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPBF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IR2233JPbF, MOSFET 6, 500 mA, 20V 44-Pin, PLCC

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

Infineon IKQ40N120CH3XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ40N120CT2XKSA1, P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

Infineon N-Channel MOSFET, 160 A, 135 V, 7 + Tab-Pin D2PAK IRF135SA204

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?