IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3
IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm