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IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.31

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 19.91mm, Width: 5.03mm, Height: 20.88mm, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.56

1

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 10.13

1

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 9.31

1

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 8.92

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 8.17

1

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 17.52

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 9.59

1

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 17.77

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 10.13

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 9.30

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 10.02

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 9.11

1

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 15.25

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 660 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 9.09

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.39

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 660 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 10.67

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.49

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 660 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 10.55

1

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 10.77

1

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 9.32

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 8.69

1

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 10.77

1

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.62

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 14.85

1

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IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

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Digital synlighed. Målbart afkast.

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Price (EUR)

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXTK102N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 76 A, 650 V, 4-Pin SOT-227B IXTN102N65X2

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXFH18N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

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Eller nyder konkurrenterne godt af dit fravær?