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IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 1.80

1

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 12.68

1

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 1.92

1

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.06

1

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 14.66

1

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 12.31

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 23.43

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 20.22

1

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 94 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 20.65

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 4.99

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm, Length: 15.8mm

GBP 3.27

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.43

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm, Length: 15.8mm

GBP 3.27

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.12

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 4.65

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 4.46

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm, Length: 15.8mm

GBP 2.72

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.12

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.19

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 7.61

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.04

1

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.89

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 13.22

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.04

1

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IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

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Digital synlighed. Målbart afkast.

Er du synlig online? Eller nyder konkurrenterne godt af dit fravær?

Brand

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Merchant

Price (EUR)

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXFR64N50Q3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-3P IXFQ26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?