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Cypress Semiconductor 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG

Cypress Semiconductor 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG

Cypress Semiconductor 64kbit Parallel FRAM Memory 28-Pin SOIC, Organisation: 8k x 8 bit, Data Bus Width: 8bit, Maximum Random Access Time: 70ns, Mounting Type: Surface Mount, Dimensions: 18.11 x 7.62 x 2.37mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +85 °C, Automotive Standard: AEC-Q100, Minimum Operating Supply Voltage: 2.7 V, Minimum Operating Temperature: -40 °C, MPN: FM16W08-SG

GBP 7.59
1

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, S34ML02G200TFI000

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, S34ML02G200TFI000

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, Organisation: 128M x 16 bit, 256M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 12.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 30µs, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 8, 16, Number of Words: 128M, 256M, MPN: S34ML02G200TFI000

GBP 5.09
1

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, S34ML02G200TFI000

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, S34ML02G200TFI000

Cypress Semiconductor NAND 2Gbit Parallel Flash Memory 48-Pin TSOP, Organisation: 128M x 16 bit, 256M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 12.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 30µs, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 8, 16, Number of Words: 128M, 256M, MPN: S34ML02G200TFI000

GBP 5.65
1

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S10TFI010

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S10TFI010

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, Organisation: 32M x 16 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 14.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 100ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 16bit, MPN: S29GL512S10TFI010

GBP 6.48
1

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, Organisation: 32M x 16 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 14.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 110ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 16bit, MPN: S29GL512S11TFI020

GBP 5.37
1

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S10TFI010

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S10TFI010

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, Organisation: 32M x 16 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 14.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 100ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 16bit, MPN: S29GL512S10TFI010

GBP 5.85
1

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

Cypress Semiconductor NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, Organisation: 32M x 16 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 14.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 110ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 16bit, MPN: S29GL512S11TFI020

GBP 6.48
1

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, S29JL064J70TFI000

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, S29JL064J70TFI000

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, Organisation: 4M x 16 bit, 8M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 12.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 70ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 8 bit, 16 bit, MPN: S29JL064J70TFI000

GBP 4.45
1

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, S29JL064J70TFI000

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, S29JL064J70TFI000

Cypress Semiconductor NOR 64Mbit CFI, Parallel Flash Memory 48-Pin TSOP, Organisation: 4M x 16 bit, 8M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 2.7 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 18.5 x 12.1 x 1.05mm, Maximum Operating Temperature: +85 °C, Maximum Random Access Time: 70ns, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 8 bit, 16 bit, MPN: S29JL064J70TFI000

GBP 4.71
1

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA, Organisation: 64M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 1.65 (I/O) V, 2.7 (Core) V, Maximum Operating Supply Voltage: 3.6 (Core) V, 3.6 (I/O) V, Length: 8mm, Height: 1mm, Width: 6mm, Dimensions: 8 x 6 x 1mm, Automotive Standard: AEC-Q100, Maximum Operating Temperature: +105 °C

GBP 6.70
1

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA

Cypress Semiconductor S25FL512SAGBHB210, CFI, Parallel, SPI NOR 512Mbit Flash Memory Chip, 24-Pin BGA, Organisation: 64M x 8 bit, Mounting Type: Surface Mount, Minimum Operating Supply Voltage: 1.65 (I/O) V, 2.7 (Core) V, Maximum Operating Supply Voltage: 3.6 (Core) V, 3.6 (I/O) V, Dimensions: 8 x 6 x 1mm, Automotive Standard: AEC-Q100, Maximum Operating Temperature: +105 °C, Minimum Operating Temperature: -40 °C, Number of Bits per Word: 8bit

GBP 5.72
1