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Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

GBP 4.94

1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247, MPN: IRF250P225

GBP 5.50

1

Infineon 0.17 A DPNO Solid State Relay, AC/DC, PCB Mount, MOSFET, 250 V ac/dc Maximum Load

Infineon 0.17 A DPNO Solid State Relay, AC/DC, PCB Mount, MOSFET, 250 V ac/dc Maximum Load, Terminal Type: PCB Pin, Package Style: DIP, Maximum Turn On Time: 3 ms, Dimensions: 9.39 x 6.47 x 3.42mm, Capacitance: 50pF, Control Voltage Range: 0 → 250 V ac/dc, Depth: 6.47mm, MPN: PVT322APBF

GBP 7.89

1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.022 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: StrongIRFET, MPN: IRF250P225

GBP 6.00

1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.022 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: StrongIRFET, MPN: IRF250P225

GBP 5.10

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 4.57mm, Length: 10.31mm

GBP 5.15

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 4.57mm, Length: 10.31mm

GBP 6.49

1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 4.86

1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 6.37

1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 5.40

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.2V

GBP 4.57

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.2V

GBP 5.82

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 6.85

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 5.85

1

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm

GBP 5.90

1

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm

GBP 5.08

1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 6.65

1

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.51

1

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load, Terminal Type: PCB Pin, Package Style: SMT, Maximum Turn On Time: 3 ms, Dimensions: 9.39 x 6.47 x 3.42mm, Depth: 6.47mm, Length: 9.39mm, Load Voltage Range: 0 → 250V, MPN: PVT322SPBF

GBP 7.01

1

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load, Terminal Type: PCB Pin, Package Style: SMT, Maximum Turn On Time: 3 ms, Dimensions: 9.39 x 6.47 x 3.42mm, Depth: 6.47mm, Length: 9.39mm, Load Voltage Range: 0 → 250V, MPN: PVT322SPBF

GBP 7.43

1

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.65

1

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.92

1

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.47

1

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.03

1

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.31mm, Height: 20.7mm, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +175 °C

GBP 5.47

1

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Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon 0.17 A DPNO Solid State Relay, AC/DC, PCB Mount, MOSFET, 250 V ac/dc Maximum Load

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

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Digital synlighed. Målbart afkast.

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Merchant

Price (EUR)

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon 0.17 A DPNO Solid State Relay, AC/DC, PCB Mount, MOSFET, 250 V ac/dc Maximum Load

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC IRFP4768PBF

Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1

Infineon N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC IRFP4332PBF

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon 0.17 A DP-NO Solid State Relay, AC/DC, Surface Mount, MOSFET, 250 V Maximum Load

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon AUIRGP4062D IGBT, 48 A 600 V, 3-Pin TO-247AC, Through Hole

Infineon IRGP4640DPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

Er du synlig online?
Eller nyder konkurrenterne godt af dit fravær?