IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3
IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm